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RN1426

Part No RN1426
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMINI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 90 @ 100mA, 1V
Max Vce (sat) 250mV @ 1mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 300MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 183643-RN1426
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1426 CAD Model

Description

The Toshiba Semiconductor and Storage RN1426 is a high-performance NPN pre-biased transistor that is designed to provide a high level of performance and reliability.

  • Applications: Suitable for use in a wide range of applications, including audio amplifiers, power supplies, and voltage regulators.
  • Features: The device features a low collector-emitter saturation voltage and a high current gain, making it an ideal choice for low-power applications. It also provides a variety of built-in protection features, including over-current protection and thermal shutdown, which can help ensure the safety and reliability of your system.
  • Supply and Demand Status: Balance
  • Suitable for: Your next project

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,900 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Shipping Information

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