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Same model may have multiple batches, images only for reference.
RN1427TE85LF Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

RN1427TE85LF

Part No RN1427TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 0.8A SMINI
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 300 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Case / Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Package Tape & Reel
Supply and Demand Status Limited
Win Source Part Number 1494868-RN1427TE85LF
Ultra Librarian 3D Model Ultra Librarian RN1427TE85LF CAD Model

Description

N

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