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Same model may have multiple batches, images only for reference.
RN1508(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1508(TE85L,F)

Part No RN1508(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1508(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 101598-RN1508(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1508(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1508(TE85L,F) is a high-frequency dual NPN transistor with a transition frequency of 250MHz.

  • Designed for: Use in applications where high gain and low noise are required.
  • Type: Pre-biased and emitter-coupled
  • Collector-Emitter Breakdown Voltage: 50V
  • Current - Collector (Max): 100mA
  • Power - Max: 300mW
  • Collector-Emitter Saturation Voltage: 300mV @ 250μA and 5mA
  • Typical Gain (hFE): 80 @ 10mA and 5V
  • Package: SMV
  • Mounting Type: SMD (SMT) technology
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter-Base (R2) (Ohms): 47k ohms
  • Product Status: Active
  • Category: Discrete Semiconductor Products

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