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Same model may have multiple batches, images only for reference.
RN4610(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4610(TE85L,F)

Part No RN4610(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Datasheet
RN4610(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 098706-RN4610(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4610(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN4610(TE85L,F) is a dual NPN and PNP pre-biased transistor that is part of the SM6 case/package.

  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Win Source Part Number: 098706-RN4610(TE85L,F)

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