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Same model may have multiple batches, images only for reference.
2SC5095-R(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC5095-R(TE85L,F)

Part No 2SC5095-R(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description RF TRANS NPN 10V 10GHZ SC70  /  RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
Gain 13dB ~ 7.5dB
Power - Max 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7mA, 6V
Current - Collector (Ic) (Max) 15mA
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Base Product Number 2SC5095
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 2SC5095-R(TE85LF)CT,2SC5095-R(TE85LF)DKR,2SC5095-RTE85LF,2SC5095-R(TE85LF)TR
Standard Package 3,000
Win Source Part Number 1141295-2SC5095-R(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian 2SC5095-R(TE85L,F) CAD Model

Description

The 2SC5095-R(TE85L,F) is a bipolar transistor component manufactured by Toshiba Semiconductor and Storage.

  • Package: 3,000
  • Application: RF amplifiers, oscillators, and mixers
  • Power: 100mW
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Gain: 13dB ~ 7.5dB
  • Frequency Transition: 10GHz
  • Noise Figure: 1.8dB @ 2GHz
  • Transistor Type: NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
  • Package/Case: SC-70, SOT-323

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