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Same model may have multiple batches, images only for reference.
HN1C03FU-A(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1C03FU-A(TE85L,F)

Part No HN1C03FU-A(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 20V 0.3A US6
Datasheet
HN1C03FU-A(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel(TR)
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 300mA
Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 4mA, 2V
Power - Max 200mW
Frequency - Transition 30MHz
Mounting Style SMD/SMT
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Device Package US6
Win Source Part Number 001690-HN1C03FU-A(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN1C03FU-A(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 001690-HN1C03FU-A(TE85L,F) is a Bipolar Transistor Array that belongs to the Discrete Semiconductor Products category.

  • Maximum Power: 200mW
  • Maximum Voltage: 20V
  • Best Suited For: Applications that require high gain and low noise, such as audio amplifiers, signal processing circuits, and voltage regulators.

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