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Same model may have multiple batches, images only for reference.
RN1962FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1962FE(TE85L,F)

Part No RN1962FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1962FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 107267-RN1962FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1962FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1962FE(TE85L,F) is a dual NPN transistor with a frequency transition of 250MHz.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Transistor is packaged in: an ES6 case
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: balanced

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