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Same model may have multiple batches, images only for reference.
RN2606(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2606(TE85L,F)

Part No RN2606(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SM6
Datasheet
RN2606(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 109241-RN2606(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2606(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2606(TE85L,F) is a dual PNP pre-biased transistor with a base resistor of 4.7k ohms and an emitter base resistor of 47k ohms.

  • Collector Cut-Off Current: 100nA (ICBO)
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Frequency Transition: 200MHz
  • Category: discrete semiconductor products
  • Case/Package: SM6 case/package
  • Win Source Part Number: 109241-RN2606(TE85L,F)

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