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Same model may have multiple batches, images only for reference.
RN1604(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1604(TE85L,F)

Part No RN1604(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SM6
Datasheet
RN1604(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 101750-RN1604(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1604(TE85L,F) CAD Model

Description

This electronic component is a dual NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 101750-RN1604(TE85L,F)
  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Frequency Transition: 250MHz
  • Transistor Polarity: 2 NPN - Pre-Biased (Dual)
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • Category: Discrete Semiconductor Products
  • Status: Currently active
  • Case / Package: SM6
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 300mW
  • Supply and Demand Status: Balanced

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