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RN1707JE(TE85L,F)

Part No RN1707JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV
Base Product Number RN1707
Standard Package 4,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 297092-RN1707JE(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian RN1707JE(TE85L,F) CAD Model

Description

The RN1707JE(TE85L,F is a bipolar transistor array from Toshiba Semiconductor and Storage.

  • Category: Discrete Semiconductor Products
  • Application: Specifically designed for use in bipolar transistor arrays.
  • Package: Tape and reel package
  • Standard Package: 4,000 pieces
  • Status: Active product
  • Maximum Power: 100mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Transistor Type: 2 NPN transistors that are pre-biased and coupled through the emitter.
  • Operating Temperature Range: -40°C to 85°C
  • Mounting: Suitable for surface mount applications.
  • Package Type: SOT-553 package.
  • ECCN: EAR99, indicating that it is not subject to export control restrictions.
  • HTSUS Code: 8541.21.0075.

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