The Toshiba Semiconductor and Storage is a discrete semiconductor product manufacturer. The HN4B01JE(TE85L,F) is an NPN, PNP (Emitter Coupled) transistor with a maximum current collector of 150mA and a VCEO maximum collector-emitter breakdown voltage of 50V. The transistor has a maximum Vce (sat) of 250mV @ 10mA, 100mA and a collector cut-off current (Max) of 100nA (ICBO). The typical gain (hFE) (Min) is 120 @ 10MA, 100MA and the maximum power dissipation is 100mW. It is packaged in a reel - TR case and mounted in an SMD (SMT) with an ESV case / package.