The HN1B01F-Y(TE85L,F) is a transistor array manufactured by Toshiba Semiconductor and Storage. It is a bipolar (BJT) transistor with a power of 300mW and a collector-emitter breakdown voltage of 50V. The HN1B01F-Y(TE85L,F) has a current collector (Ic) (Max) of 150mA and a DC current gain (hFE) (Min) of 120 @ 2mA, 6V. It is housed in an SC-74, SOT-457 package and is mounted in an SMD/SMT style. This transistor array is commonly used in electronic circuits that require multiple transistors, such as amplifiers, switches, and oscillators.