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Same model may have multiple batches, images only for reference.
RN1710,LF Real Image
Same model may have multiple batches, images only for reference.

RN1710,LF

Part No RN1710,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package USV
Base Product Number RN1710
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 297096-RN1710,LF
Ultra Librarian 3D Model Ultra Librarian RN1710,LF CAD Model

Description

The 297096-RN1710,LF is a dual NPN bipolar transistor array from Toshiba Semiconductor and Storage.

  • Application: Designed for use in Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased.
  • Maximum Power Dissipation: 200mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current (Ic): 100mA
  • Vce Saturation (Max): 300mV @ 250μA and 5mA
  • DC Current Gain (hFE): 120 @ 1mA and 5V
  • Transition Frequency: 250MHz
  • Package: 5-TSSOP, SC-70-5, SOT-353
  • Mounting: Surface mountable
  • Base Resistor (R1): 4.7kOhms
  • Operating Temperature Range: -55°C to 100°C
  • Status: Active product in the market.

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