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RN1901(T5L,F,T)

Part No RN1901(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 062573-RN1901(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1901(T5L,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage 062573-RN1901(T5L,F,T) is a dual NPN pre-biased transistor designed for use in electronic circuits.

  • Component Type: Dual NPN pre-biased transistor
  • Frequency Transition: 250MHz
  • Mounting: Surface-mount technology
  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0383 $62.2980
140+ $0.8524 $119.3360
210+ $0.8258 $173.4180
290+ $0.7981 $231.4490
375+ $0.7715 $289.3125
505+ $0.6918 $349.3590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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