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Same model may have multiple batches, images only for reference.
RN1903,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1903,LF(CT

Part No RN1903,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
RN1903,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092475-RN1903,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1903,LF(CT CAD Model

Description

The RN1903,LF(CT) transistor from Toshiba Semiconductor and Storage is a discrete semiconductor product that is commonly used in electronic devices.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 70 @ 10mA and 5V
  • Maximum Power Dissipation: 200mW
  • Design: Designed for surface-mount applications
  • Transition Frequency: 250MHz

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Pricing & Ordering

Quantity Unit Price Ext. Price
770+ $0.0650 $50.0500
1,880+ $0.0533 $100.2040
2,905+ $0.0517 $150.1885
4,000+ $0.0500 $200.0000
5,180+ $0.0483 $250.1940
6,930+ $0.0433 $300.0690
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Availability: 241,000 pieces
MOQ: 770 pcs
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