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Same model may have multiple batches, images only for reference.
RN1904 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1904

Part No RN1904
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
RN1904 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 183681-RN1904
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1904 CAD Model

Description

The RN1904 is a dual NPN pre-biased transistor from Toshiba Semiconductor and Storage.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Frequency Transition Rating: 250MHz
  • Typical Gain: 80 @ 10mA and 5V
  • Resistor Values for the Base and Emitter Base: both 47k ohms
  • Package: US6
  • Maximum Power Dissipation: 200mW
  • Popularity Rating: medium
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,085+ $0.0277 $57.7545
5,000+ $0.0231 $115.5000
7,895+ $0.0219 $172.9005
11,115+ $0.0208 $231.1920
13,890+ $0.0208 $288.9120
18,750+ $0.0185 $346.8750
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