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Same model may have multiple batches, images only for reference.
RN1911FETE85LF Real Image
Same model may have multiple batches, images only for reference.

RN1911FETE85LF

Part No RN1911FETE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1911FETE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 098819-RN1911FETE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1911FETE85LF CAD Model

Description

The Toshiba Semiconductor and Storage 098819-RN1911FETE85LF is an NPN pre-biased dual transistor designed for use in discrete semiconductor products.

  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Frequency Transition: 250MHz
  • Typical Gain: 120 @ 1mA and 5V
  • Ideal for use in high-frequency applications.
  • Package: ES6
  • Mounting: SMD (SMT) technology
  • Resistor-Base (R1): has a resistance of 10k ohms
  • Collector Cut-off Current (max): 100nA (ICBO)
  • Maximum Power Dissipation: 100mW
  • Low Vce (sat): 300mV @ 250μA and 5mA
  • Popular choice for discrete semiconductor products due to its high performance and reliability.

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