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RN1964TE85LF

Part No RN1964TE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 098749-RN1964TE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1964TE85LF CAD Model

Description

The Toshiba Semiconductor and Storage RN1964TE85LF is a pre-biased dual NPN transistor with a maximum collector-emitter breakdown voltage of 50V. This transistor is designed for use in discrete semiconductor products that require a maximum power dissipation of 200mW.

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Pricing & Ordering

Quantity Unit Price Ext. Price
850+ $0.0681 $57.8850
2,070+ $0.0559 $115.7130
3,200+ $0.0542 $173.4400
4,410+ $0.0524 $231.0840
5,710+ $0.0506 $288.9260
7,635+ $0.0454 $346.6290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 59,600 pieces
MOQ: 850 pcs
Order Increment : 1 pcs
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