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RN2101,LF(CT

Part No RN2101,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W SSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092486-RN2101,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2101,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN2101,LF(CT) is an electronic component.

  • Supply and Demand: Sufficient
  • Type: PNP Pre-Biased Transistor
  • Maximum Collector-Emitter Breakdown Voltage: 50V

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Pricing & Ordering

Quantity Unit Price Ext. Price
740+ $0.0676 $50.0240
1,805+ $0.0555 $100.1775
2,795+ $0.0537 $150.0915
3,850+ $0.0520 $200.2000
4,975+ $0.0503 $250.2425
6,655+ $0.0451 $300.1405
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 740 pcs
Order Increment : 1 pcs
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