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RN2102,LF

Name: RN2102,LF
Brand: Toshiba Semiconductor and Storage
SKU: 297161
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN2102,LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS PNP 0.1W SSM
Datasheet	RN2102,LF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	PNP - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	10k
Typical Gain (hFE) (Min)	50 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	200MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	SSM
Win Source Part Number	096781-RN2102,LF
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN2102,LF CAD Model

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Description

The RN2102,LF transistor is a high-quality electronic component manufactured by Toshiba Semiconductor and Storage.

Product Category: Discrete semiconductor products
Popularity: Medium
Supply and Demand Status: Sufficient
Transistor Polarity: PNP - Pre-Biased
Maximum Collector-Emitter Breakdown Voltage: 50V
Maximum Power Dissipation: 100mW
Typical Gain (hFE) (Min): 50 @ 10mA, 5V

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RN2102,LF

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