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Same model may have multiple batches, images only for reference.
RN2103ACT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

RN2103ACT(TPL3)

Part No RN2103ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W CST3
Datasheet
RN2103ACT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 099719-RN2103ACT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2103ACT(TPL3) CAD Model

Description

The RN2103ACT(TPL3) is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage.

  • Maximum Collector Current: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain: 70 @ 10mA, 5V
  • Compliance: RoHS compliant
  • Package: CST3 package

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