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RN2105

Part No RN2105
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W CST3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 183716-RN2105
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2105 CAD Model

Description

This electronic component from Toshiba Semiconductor and Storage has a Win Source Part Number of 183716-RN2105.

  • Win Source Part Number: 183716-RN2105
  • Product Type: Discrete semiconductor product
  • Status: Active
  • Case/Package: CST3
  • Maximum Collector Current: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: Sufficient
  • Transistor Polarity: PNP - Pre-Biased
  • Resistor Values: R1 = 2.2k, R2 = 47k
  • Maximum Collector Cut-Off Current: 500nA
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Vce (sat): 150mV @ 250μA, 5mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
725+ $0.0797 $57.7825
1,755+ $0.0658 $115.4790
2,730+ $0.0635 $173.3550
3,775+ $0.0612 $231.0300
4,905+ $0.0589 $288.9045
6,525+ $0.0531 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 197,800 pieces
MOQ: 725 pcs
Order Increment : 1 pcs
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