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Same model may have multiple batches, images only for reference.
RN2109MFV(TPL3)
Same model may have multiple batches, images only for reference.

RN2109MFV(TPL3)

Part No RN2109MFV(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description X34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-723
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 50 V
Continuous Collector Current -100 mA
Element Configuration Single
hFE Min 70
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 150 mW
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Polarity PNP
Power Dissipation 150 mW
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1006080-RN2109MFV(TPL3)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN2109MFV(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN2109MFV(TPL3) is a PNP RF transistor with a maximum power dissipation of 150 mW and a collector-emitter breakdown voltage of 50 V.

  • Power Dissipation: 150 mW
  • Collector-Emitter Breakdown Voltage: 50 V
  • Mounting: Surface Mount
  • Package: SOT-723
  • Minimum hFE: 70
  • Maximum Collector Current: 100 mA
  • Application: RF Amplification
  • RoHS: Compliant
  • Radiation Hardening: No
  • Supply and Demand Status: Shortage

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