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RN2311,LF

Part No RN2311,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A USM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200 MHz
Power - Max 100 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Base Product Number RN2311
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 835660-RN2311,LF
Ultra Librarian 3D Model Ultra Librarian RN2311,LF CAD Model

Description

The 835660-RN2311,LF is a pre-biased PNP transistor from Toshiba Semiconductor and Storage.

  • Category: Discrete Semiconductor Products
  • Series: Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
  • Package: Tape & reel
  • Standard Package Size: 3,000 pieces
  • Maximum Power Rating: 100 mW
  • Voltage Breakdown: 50 V
  • Current Rating: 100 mA
  • DC Current Gain: 120
  • Mounting Type: Surface mount
  • Package: SC-70, SOT-323
  • ECCN Classification: EAR99
  • HTSUS Code: 8541.21.0075

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4435 $59.8725
320+ $0.3638 $116.4160
495+ $0.3534 $174.9330
680+ $0.3419 $232.4920
875+ $0.3303 $289.0125
1,175+ $0.2957 $347.4475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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