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Same model may have multiple batches, images only for reference.
RF1S630SM9A
Same model may have multiple batches, images only for reference.

RF1S630SM9A

Part No RF1S630SM9A
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 931962-RF1S630SM9A
Ultra Librarian 3D Model Ultra Librarian RF1S630SM9A CAD Model

Description

The 931962-RF1S630SM9A is a N-Channel MOSFET transistor designed for use in discrete semiconductor products from Harris Corporation.

  • Vdss: 200V
  • Id: 6A @ 25°C
  • Rds On (Max): 400mOhm @ 5A and 10V
  • Power Dissipation: 75W
  • Mounting Type: Surface Mountable
  • Package: TO-263-3, D²Pak
  • Qg: 30nC @ 10V
  • Ciss: 600pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Product Status: Active

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