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RN2404TE85LF

Name: RN2404TE85LF
Brand: Toshiba Semiconductor and Storage
SKU: 297273
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN2404TE85LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS PNP 0.2W S-MINI
Datasheet	RN2404TE85LF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	PNP - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	47k
Resistor - Emitter Base (R2) (Ohms)	47k
Typical Gain (hFE) (Min)	80 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	200MHz
Maximum Power Dissipation	200mW
Mounting	SMD (SMT)
Case / Package	S-Mini
Win Source Part Number	096955-RN2404TE85LF
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN2404TE85LF CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage RN2404TE85LF is a PNP pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V.

Typical Gain: 80 @ 10mA and 5V
Maximum Power Dissipation: 200mW
Frequency Transition: 200MHz
Package: S-Mini case
Maximum Current Collector: 100mA
Collector Cut-Off Current: 500nA
Resistor Values (Base and Emitter Base): 47k
Application: discrete semiconductor products

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RN2404TE85LF

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