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Same model may have multiple batches, images only for reference.
RN2604(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2604(TE85L,F)

Part No RN2604(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SM6
Datasheet
RN2604(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 109240-RN2604(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2604(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 109240-RN2604(TE85L,F) is a dual PNP transistor with a pre-biased configuration.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain: 80 @ 10mA and 5V
  • Maximum Power Dissipation: 300mW
  • Mounting: surface-mount device (SMD)
  • Package: SM6 package
  • Frequency Transition: 200MHz
  • Collector Cut-Off Current: 100nA (ICBO)
  • Resistor-Base and Resistor-Emitter Base: 47k ohms each
  • Application: commonly used in discrete semiconductor products

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