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Same model may have multiple batches, images only for reference.
RN2964FE(TE85L,F)
Same model may have multiple batches, images only for reference.

RN2964FE(TE85L,F)

Part No RN2964FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Manufacturer Toshiba Semiconductor and Storage
Package Reel - TR
Part Status Obsolete
Mounting Surface Mount
Package SOT-563, SOT-666
Case / Package ES6
Family Name RN1132
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number RN2964FE(TE85LF)CT, RN2964FE(TE85LF)DKR, RN2964FE(TE85LF)TR
Quantity per package 4000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 932296-RN2964FE(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian RN2964FE(TE85L,F) CAD Model

Description

The RN2964FE(TE85L,F) is a pre-biased bipolar transistor manufactured by Toshiba Semiconductor and Storage. It has two PNP pre-biased transistors with a maximum collector current of 100 mA and a frequency transition of 200 MHz.

  • Maximum collector current: 100 mA
  • Frequency transition: 200 MHz
  • Maximum power rating: 100 mW
  • Voltage breakdown: 50 V (collector to emitter)
  • Mounting: surface-mounted
  • Package: ES6 package
  • Family: RN1132 family
  • Status: obsolete
  • Popularity: high
  • Supply and demand status: balance

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