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RN2965(TE85L,F)

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Part No	RN2965(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	RF Transistors (BJT)
Description	TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	200mW
Mounting	SMD (SMT)
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Base Product Number	RN2965
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	RN2965(TE85LF)DKR,RN2965(TE85LF)CT,RN2965(TE85LF)TR
Standard Package	3,000
Win Source Part Number	1134917-RN2965(TE85L,F)
Ultra Librarian 3D Model	Ultra Librarian RN2965(TE85L,F) CAD Model

Description

This is a pre-biased transistor array with a Win Source Part Number of 1134917-RN2965(TE85L,F).

Power Rating: 200mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Packaging: Tape and Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Package/Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0095
Manufacturer: Toshiba Semiconductor and Storage
Base Product Number: RN2965

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RN2965(TE85L,F)

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