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RN4601

Part No RN4601
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243487-RN4601
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4601 CAD Model

Description

The RN4601 is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for various switching and amplification applications. It's characterized by its low on-resistance and fast switching speed, making it suitable for use in power management circuits and load switching applications.

Applications:

  • Load Switching: Used as a high-side switch in various electronic circuits.
  • Power Management: Employed in DC-DC converters and voltage regulators.
  • Portable Devices: Found in battery management systems for efficient power control.
  • Motor Control: Used in low-power motor control applications.
  • Analog Switching: Can be used as an analog switch in signal processing circuits.

Features:

  • P-Channel MOSFET: Suitable for high-side switching applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • Fast Switching Speed: Enables efficient operation at high frequencies.
  • Small Package: Available in compact surface-mount packages for space-saving designs.
  • RoHS Compliant: Meets environmental regulations.

Benefits:

  • Efficient Power Control: Low on-resistance improves power efficiency.
  • Compact Design: Small package size allows for dense board layouts.
  • Simplified Circuitry: Easy to integrate into various electronic circuits.
  • Reliable Performance: Designed for stable and consistent operation.
  • Reduced Power Dissipation: Lower conduction losses minimize heat generation.

Technical Specifications:

The RN4601 typically features a drain-source voltage (VDS) rating of -30V, a continuous drain current (ID) of around -3A, and a gate-source voltage (VGS) rating of ±20V. The on-resistance (RDS(on)) is typically in the range of tens to hundreds of milliohms, depending on the gate-source voltage applied. It's commonly available in a surface-mount package such as a SOT-23 or similar. Consult the Toshiba datasheet for precise RDS(on) values at specific VGS and ID conditions, as well as for thermal resistance and power dissipation limits.

This P-channel MOSFET is a versatile component suitable for a wide range of power management and switching applications, offering a balance of performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0591 $58.2505
135+ $0.8697 $117.4095
210+ $0.8420 $176.8200
285+ $0.8154 $232.3890
370+ $0.7877 $291.4490
495+ $0.7069 $349.9155
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Availability: 74,100 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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