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Same model may have multiple batches, images only for reference.
RN4606(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4606(TE85L,F)

Part No RN4606(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Datasheet
RN4606(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 200MHz, 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 101069-RN4606(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4606(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN4606(TE85L,F) is a dual NPN and PNP pre-biased transistor in SM6 package.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Typical Gain: 80 @ 10mA and 5V
  • Maximum Power Dissipation: 300mW
  • Collector Cut-Off Current: 100μA
  • Base Resistor: 4.7k ohms
  • Emitter-Base Resistor: 47k ohms
  • Frequency Transition: 200MHz and 250MHz
  • Maximum Vce(sat): 300mV @ 250μA and 5mA
  • Applications: Audio amplifiers, switching regulators, and power management circuits.

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