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Same model may have multiple batches, images only for reference.
RN4908FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4908FE(TE85L,F)

Part No RN4908FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4908FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Style SMD/SMT
Package SOT-563, SOT-666
Manufacturer Device Package ES6
Win Source Part Number 098276-RN4908FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4908FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN4908FE(TE85L,F) is a pre-biased transistor array in a SOT-563, SOT-666 package.

  • Voltage Collector-Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • DC Current Gain: 80 @ 10mA, 5V
  • Frequency Transition: 200MHz
  • Ideal Use: audio amplifiers, pre-amplifiers, and switching applications

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