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Same model may have multiple batches, images only for reference.
RN4901,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4901,LF(CT

Part No RN4901,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4901,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092509-RN4901,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4901,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage 1092509-RN4901,LF(CT) is an active NPN/PNP pre-biased dual transistor.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: 1092509-RN4901,LF(CT)
  • Transistor Type: NPN/PNP Pre-Biased Dual Transistor
  • Status: Active
  • Supply and Demand Status: Sufficient
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (max): 500nA
  • Typical Gain (hFE) (min): 30 @ 10mA, 5V

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