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Same model may have multiple batches, images only for reference.
RN4901,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4901,LF

Part No RN4901,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4901,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 100172-RN4901,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4901,LF CAD Model

Description

Toshiba Semiconductor and Storage manufactures the electronic component with Id 304551.

  • Product Type: Dual NPN and PNP transistor with a pre-biased configuration.
  • Frequency Transition: 250MHz and 200MHz
  • Collector Cut-Off Current: 500nA
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Supply and Demand Status: Sufficient

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