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RN4902FE,LF

Part No RN4902FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 097095-RN4902FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4902FE,LF CAD Model

Description

The Toshiba Semiconductor and Storage electronic component with Win Source Part Number 097095-RN4902FE,LF is a discrete semiconductor product falling under the category of Discrete Semiconductor Products.

  • Supply and Demand Status: Sufficient
  • Transistor Polarity: Dual pre-biased NPN and PNP
  • Frequency Transition: 250MHz and 200MHz
  • Resistor-Base (R1) (Ohms): 10k
  • Resistor-Emitter Base (R2) (Ohms): 10k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 50 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Case/Package: ES6
  • Manufacturer: Toshiba Semiconductor and Storage

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