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Same model may have multiple batches, images only for reference.
RN4904,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4904,LF

Part No RN4904,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4904,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 097004-RN4904,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4904,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN4904,LF is a pre-biased dual NPN and PNP transistor designed for use in discrete semiconductor products.

  • Frequency: Transition frequency of 200MHz
  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 200mW
  • Case/Package: US6
  • Supply: Reel

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