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Same model may have multiple batches, images only for reference.
RN4908FE,LXHF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4908FE,LXHF(CT

Part No RN4908FE,LXHF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description AUTO AEC-Q 2-IN-1 (POINT-SYMMETR / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 100mW Surface Mount ES6
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz, 250MHz
Power - Max 100mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 264-RN4908FE,LXHF(CTTR,264-RN4908FE,LXHF(CT-ND,264-RN4908FELXHF(CT,264-RN4908FELXHF(CTDKR,264-RN4908FE,LXHF(CT,264-RN4908FELXHF(CTTR,264-RN4908FE,LXHF(CTDKR-ND,264-RN4908FE,LXHF(CTTR-ND,264-RN4908FE,LXHF(CTDKR
Standard Package 4,000
Win Source Part Number 1088738-RN4908FE,LXHF(CT
Ultra Librarian 3D Model Ultra Librarian RN4908FE,LXHF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN4908FE,LXHF(CT is a pre-biased transistor array designed for use in discrete semiconductor products.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Type: Pre-biased transistor array
  • Transistors: 1 NPN and 1 PNP, both pre-biased
  • Maximum Power: 100mW
  • Maximum Voltage for Collector Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 300mV @ 250µA and 5mA
  • Maximum Collector Cutoff: 500nA
  • hFE: 80 @ 10mA and 5V
  • Frequency Transition: 200MHz and 250MHz
  • Package: SOT-563 or SOT-666

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