The RN1709,LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased electronic component manufactured by Toshiba Semiconductor and Storage.

• Supply and Demand: The supply and demand status of this component is balanced.
• Transistor Type: The RN1709,LF is a dual NPN - Pre-Biased transistor type
• Collector Emitter Breakdown Voltage: with a voltage - collector emitter breakdown (Max) of 50V
• Collector Current: a current - collector (Ic) (Max) of 100mA.
• Vce Saturation: It has a Vce saturation (Max) @ Ib, Ic of 300mV @ 250μA, 5mA
• DC Current Gain: a DC current gain (hFE) (Min) @ Ic, Vce of 70 @ 10mA, 5V.
• Applications: The RN1709,LF is a reliable and efficient product that is used in various applications like voltage-controlled switching, amplification of analog signals, and other digital signal processing applications.