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Same model may have multiple batches, images only for reference.
RN4981,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4981,LF(CT

Part No RN4981,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4981,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092519-RN4981,LF(CT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4981,LF(CT CAD Model

Description

The RN4981,LF(CT) is a pre-biased dual NPN and PNP transistor from Toshiba Semiconductor and Storage.

  • Designed for: use in discrete semiconductor products
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain: 30 @ 10mA and 5V
  • Frequency Transition: 250MHz and 200MHz
  • Maximum Power Dissipation: 200mW
  • Case/Package: US6
  • Mounting: SMD (SMT) technology
  • Resistor Values: 4.7k ohms (base and emitter base)
  • Packaging: reel - TR
  • Status: currently in active status

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Quantity Unit Price Ext. Price
85+ $0.7184 $61.0640
200+ $0.5902 $118.0400
305+ $0.5717 $174.3685
420+ $0.5532 $232.3440
540+ $0.5348 $288.7920
725+ $0.4793 $347.4925
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