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Same model may have multiple batches, images only for reference.
RN4983FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4983FE,LF(CB

Part No RN4983FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4983FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092523-RN4983FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4983FE,LF(CB CAD Model

Description

The Toshiba Semiconductor and Storage RN4983FE transistor is a high-quality dual pre-biased transistor that has a frequency transition of 250MHz.

  • Resistor Base: 22k ohms
  • Resistor Emitter Base: 22k ohms
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Collector Cut-Off Current (ICBO): 100nA
  • Typical Gain (hFE): 70 @ 10mA and 5V
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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