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Same model may have multiple batches, images only for reference.
TK16E60W,S1VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK16E60W,S1VX

Part No TK16E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 15.8A TO-220
Datasheet
TK16E60W,S1VX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 790μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1350pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 119317-TK16E60W,S1VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK16E60W,S1VX CAD Model

Description

The Toshiba Semiconductor and Storage TK16E60W,S1VX is a N-channel MOSFET transistor that is designed for use in a variety of electronic applications.

  • Maximum Power Dissipation: 130W
  • Breakdown Voltage: 600V
  • Continuous Drain Current: 15.8A
  • Case: TO-220
  • Packaging: tube/rail
  • Popularity: medium
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2199 $66.5970
65+ $1.8214 $118.3910
100+ $1.7648 $176.4800
140+ $1.7082 $239.1480
175+ $1.6505 $288.8375
235+ $1.4807 $347.9645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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