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Same model may have multiple batches, images only for reference.
RN4985,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4985,LF(CT

Part No RN4985,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4985,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092526-RN4985,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4985,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN4985,LF(CT) is an NPN and PNP pre-biased dual transistor that operates @ a maximum collector current of 100mA.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: RN4985,LF(CT)
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 200mW
  • Frequency Transition (NPN/PNP): 250MHz / 200MHz
  • Typical Gain (hFE): 80 @ 10mA and 5V
  • Collector Cut-off Current: 100μA (ICBO)
  • Vce (sat): 300mV @ 250μA and 5mA
  • Package: US6
  • Mounting: SMD (SMT)
  • Resistor Values (Base/Emitter Base): 2.2k / 47k ohms

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