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Same model may have multiple batches, images only for reference.
RN4986FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4986FE,LF(CB

Part No RN4986FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4986FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092527-RN4986FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4986FE,LF(CB CAD Model

Description

The RN4986FE,LF(CB) from Toshiba Semiconductor and Storage is a dual pre-biased NPN and PNP transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Power Dissipation: 100mW
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Mounting: SMD (SMT)
  • Packaging: ES6
  • Supply and Demand Status: Sufficient
  • Popularity: Medium

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