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Same model may have multiple batches, images only for reference.
RN4987FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4987FE,LF(CB

Part No RN4987FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4987FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092529-RN4987FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4987FE,LF(CB CAD Model

Description

The Toshiba Semiconductor and Storage RN4987FE,LF(CB) is an NPN and PNP pre-biased dual transistor.

  • Transistor Type: NPN and PNP pre-biased dual
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Package: ES6 case
  • Maximum Power Dissipation: 100mW
  • Typical Gain: 80 @ 10mA and 5V
  • Collector Cut-Off Current: 500nA
  • Frequency Transition: 250MHz and 200MHz
  • Resistor Values for Base: 10k ohms
  • Resistor Values for Emitter Base: 47k ohms
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Packaging: Reel - TR
  • Supply and Demand Status: Sufficient

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120+ $0.9829 $117.9480
185+ $0.9517 $176.0645
255+ $0.9217 $235.0335
325+ $0.8905 $289.4125
435+ $0.7981 $347.1735
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