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Same model may have multiple batches, images only for reference.
RN4991(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4991(T5L,F,T)

Part No RN4991(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4991(T5L,F,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100μA (ICBO)
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092533-RN4991(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4991(T5L,F,T) CAD Model

Description

The RN4991(T5L,F,T) is a pre-biased dual NPN and PNP transistor in a US6 package.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Frequency Transition: 250MHz and 200MHz
  • Mounting: SMD (SMT)
  • Packaging: reel-tr
  • Typical Gain (hFE) (Min): 120 @ 1mA, 5V
  • Maximum Power Dissipation: 200mW
  • Collector Cut-Off Current (Max): 100μA (ICBO)

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