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Same model may have multiple batches, images only for reference.
SSM3J02T(TE85L,F)
Same model may have multiple batches, images only for reference.

SSM3J02T(TE85L,F)

Part No SSM3J02T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 1.5A 30V SOT23; Transistor Type: Small Signal MOSFET; Max Current Id: -1.5A; Max Voltage Vds: -30V; On...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-23
Continuous Drain Current (ID) 1.5 A
Drain to Source Resistance 500 mΩ
Drain to Source Voltage (Vdss) -30 V
Dual Supply Voltage 30 V
Gate to Source Voltage (Vgs) 10 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.25 W
Min Operating Temperature -55 °C
Mount Surface Mount
Nominal Vgs 1.1 V
Number of Elements 1
Number of Pins 3
Power Dissipation 1.25 W
REACH SVHC Unknown
RoHS Compliant
Termination SMD/SMT
Threshold Voltage 1.1 V
Win Source Part Number 1096264-SSM3J02T(TE85L,F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SSM3J02T(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J02T(TE85L,F) is a single-element transistor with a drain to source voltage (Vdss) of -30 V.

  • Power Dissipation: 1.25 W
  • Continuous Drain Current (ID): 1.5 A
  • Package Type: SOT-23
  • Mounting: Surface-Mount Device (SMD)
  • RoHS Compliant: Yes
  • Operating Temperature: -55 °C to 150 °C

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