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SSM3J108TU

Part No SSM3J108TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.8A UFM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 250pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 158 mOhm @ 800mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 095144-SSM3J108TU
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J108TU CAD Model

Description

This electronic component is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. The Win Source Part Number for this product is 095144-SSM3J108TU and it is packaged in a reel - TR. The supply and demand status is sufficient. This product is obsolete and end-of-life (EOL), meaning it is no longer being produced.

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    Pricing & Ordering

    Quantity Unit Price Ext. Price
    435+ $0.1340 $58.2900
    1,055+ $0.1097 $115.7335
    1,635+ $0.1063 $173.8005
    2,250+ $0.1028 $231.3000
    2,910+ $0.0993 $288.9630
    3,850+ $0.0901 $346.8850
    * Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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    Availability: 170,000 pieces
    MOQ: 435 pcs
    Order Increment : 1 pcs
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    Shipping Information

    Shipped from HK warehouse
    Expected Shipping Date
    Ship today if order in (HKT)
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