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Same model may have multiple batches, images only for reference.
SSM3J130TU(TE85L) Real Image
Same model may have multiple batches, images only for reference.

SSM3J130TU(TE85L)

Part No SSM3J130TU(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET P-CH 20V 4.4A UFM
Datasheet
SSM3J130TU(TE85L) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel(TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
Rds On (Max) @ Id, Vgs 25.8 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) @ Vgs 24.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1800pF @ 10V
Power - Max 500mW
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package 3-SMD, Flat Leads
Manufacturer Device Package UFM
Win Source Part Number 030879-SSM3J130TU(TE85L)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3J130TU(TE85L) CAD Model

Description

The Toshiba Semiconductor and Storage 030879-SSM3J130TU(TE85L) is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Features: logic level gate and 1.5V drive, making it ideal for use in low-power applications
  • Drain to Source Voltage: 20V
  • Maximum Continuous Drain Current: 4.4A @ 25°C
  • Rds On (Max) @ Id, Vgs: 25.8 mOhm @ 4A, 4.5V
  • Gate Charge: 24.8nC @ 4.5V
  • Input Capacitance: 1800pF @ 10V
  • Package: 3-SMD, Flat Leads
  • Operating Temperature Range: 150°C (TJ)
  • Power Rating: 500mW
  • Popular Choice For: many applications

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