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SSM3J132TU,LF

Part No SSM3J132TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 17mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3J132
Other Names SSM3J132TU,LF(T,SSM3J132TULFDKR,SSM3J132TULFTR,SSM3J132TU,LF(B,SSM3J132TULFCT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277942-SSM3J132TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3J132TU,LF CAD Model

Description

The SSM3J132TU,LF is a P-Channel MOSFET transistor designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs.

  • Series: U-MOSVI
  • Package: 3-SMD, flat leads
  • Drain-to-Source Voltage (Vdss): 12 V
  • Continuous Drain Current (Id): 5.4A (Ta) @ 25°C
  • Maximum Rds On: 17mOhm @ 5A and 4.5V
  • Vgs(th): 1V @ 1mA
  • Maximum Power Dissipation: 500mW (Ta)
  • Gate Charge (Qg): 33 nC @ 4.5 V
  • Input Capacitance (Ciss): 2700 pF @ 10 V
  • Maximum Vgs: ±6V
  • Temperature Range: -40°C to 150°C
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3706 $50.0310
330+ $0.3041 $100.3530
510+ $0.2946 $150.2460
705+ $0.2851 $200.9955
910+ $0.2756 $250.7960
1,215+ $0.2471 $300.2265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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