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Same model may have multiple batches, images only for reference.
SSM3J132TU Real Image
Same model may have multiple batches, images only for reference.

SSM3J132TU

Part No SSM3J132TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description X34 PB-F SMALL LOW ON RESISTANCE
Datasheet
SSM3J132TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 33nC @ 4.5V
Max Input Capacitance 2700pF @ 10V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 17 mOhm @ 5A, 4.5V
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 192875-SSM3J132TU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J132TU CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J132TU is a P-channel MOSFET that is manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: sufficient
  • Type: surface-mount device
  • Applications: various electronic devices
  • Maximum Drain-Source Voltage: -12V
  • Maximum Continuous Drain Current: -5.4A
  • Features: low on-resistance and fast switching speed
  • Suitable For: power management, battery charging, and load switching applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4470 $51.4050
275+ $0.3668 $100.8700
425+ $0.3554 $151.0450
585+ $0.3439 $201.1815
755+ $0.3324 $250.9620
1,010+ $0.2980 $300.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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